Appeal No. 2001-1662 Application No. 09/048,208 beginning the barrier layer etch or complete removal of the barrier layer before commencing the overetch. id., page 6. According to the examiner, this argument is unpersuasive since these features are not claimed. Examiner's answer, Paper No. 21, mailed January 19, 2001, page 6.1 In determining the patentability of claims, the PTO gives claim language its "broadest reasonable interpretation" consistent with the specification and claims. In re Morris, 127 F.3d 1048, 1054, 44 USPQ2d 1023, 1027 (Fed. Cir. 1997) (citations omitted). The terms of a claim are generally given their ordinary meaning unless it appears from the specification or file history that the inventor intended a special definition. Vitronics Corp. v. Conceptronic, Inc., 90 F.3d 1576, 1582, 39 USPQ2d 1573, 1576 (Fed. Cir. 1996). Claim 1 recites a method of forming metal lines without microloading in the fabrication of an integrated circuit and sets forth a sequence of steps which are clearly intended to occur in 1 The examiner concedes that Abraham does not "expressly disclose providing a semiconductor structure on or within the semiconductor substrate and a semiconductor structure include [sic, including] gate electrodes and source and drain regions" as required by claim 1. id., page 5. However, appellants do not dispute the examiner's position that it would have been obvious to one of ordinary skill in the art at the time of the invention to have modified Abraham to include these structures. See id. 55Page: Previous 1 2 3 4 5 6 7 8 9 10 11 NextLast modified: November 3, 2007