Appeal No. 1999-1647
Application 08/934,088
DECISION ON APPEAL
This is a decision on appeal under 35 U.S.C. § 134 from
the final rejection of claims 17-23.
We reverse.
BACKGROUND
The invention relates to a monolithic semiconductor image
sensor device that comprises both photo-sensitive thin film
transistors (TFTs) and drive element TFTs on a single
substrate. According to the invention, the gate insulation
film of the photo-sensitive TFTs is thicker than the gate
insulation film of the associated drive circuit TFTs; see
Fig. 3(C).
Claim 17 is reproduced below.
17. A semiconductor image sensor device comprising
a plurality of thin film transistors provided on an
insulating surface, wherein,
a part of said plurality of thin film
transistors comprises an image sensor element which
outputs an electric signal in accordance with a light
irradiated thereto, and
another part of said plurality of thin film
transistors comprises a driver element to drive said
image sensor element,
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