Appeal No. 1999-1647
Application 08/934,088
transistors 22 connected to row and column conductive strips
32 and 23 and to display electrodes 30) and peripheral
circuits (such as a microprocessor 43, memory 44, and driver
circuitry) from islands of active material on the same
substrate to form a monolithic display (abstract; col. 11,
lines 28-34). Although Tasch does not disclose image sensor
elements, Tasch expressly teaches one of ordinary skill in the
art that peripheral drive elements and the elements they
control can be fabricated from islands of the same
semiconductor film as a monolithic device.
At issue is the limitation that the gate insulation film
of image sensor TFTs is thicker than the gate insulation film
of the associated driver element TFTs. As disclosed, a
silicon oxide film 44 is deposited over islands of crystalline
silicon film 43 to a thickness of 100 nm by an LPCVD process
and then removed everywhere except for the image sensor
element portion to provide a gate insulating film for the
image sensor element portion (specification, p. 14, line 15 to
p. 15, line 2). Then a silicon oxide film is formed by
thermal oxidation over both the image sensor element portion
and the driver circuit portion. The silicon oxide film 45
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