Appeal No. 1999-2122
Application No. 08/564,659
the anode, the gas-introducing means, the first means, the
second means and the third means being disposed relative to the
target and the substrate to provide for the flow of the sputtered
atoms from the target to the substrate without any obstruction.
104. An apparatus as set forth in claim 103, including,
there being in the substrate a groove defined by walls,
a shield disposed between the anode and the substrate without
obstructing the flow of sputtered atoms from the target to the
substrate and operative at a potential less than the positive
voltage on the anode to receive charged particles moving toward the
substrate,
there being a positive voltage on the anode with a magnitude,
and there being a voltage difference between the anode and the
target with a magnitude, to obtain a deposition on the substrate
of the material of the target to fill the groove and to provide a
deposition with a substantially smooth surface of the deposition on
the substrate at the positions of the groove and at the positions
removed from the groove.
105. An apparatus as set forth in claim 103, including,
there being in the substrate a groove defined by walls,
the third means including magnetic means for providing a
substantially constant magnetic field for increasing the distance
of movement of the electrons toward the target to enhance the
ionization of the atoms of the inert gas in the cavity, the third
means including the magnetic means being operative to enhance the
ionization of the atoms of the inert gas in the cavity without
obstructing the flow of the sputtered atoms from the target to the
substrate,
the substrate being at a voltage lower than the positive
voltage on the anode,
the anode having a magnitude, and the difference between the
voltages on the anode and the target having a magnitude, to obtain
a deposition of a substantially uniform thickness of the sputtered
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