Appeal No. 1999-2347 Application 08/892,560 hold below, their claims are unpatentable on grounds which do not involve Woo. The Examiner states that Woo claims the rejected invention and, thus, the declaration is inappropriate (EA19). Appellants argue that Woo does not claim the same invention because the presently claimed invention only requires the first five steps of Woo's claim 1 (Br10). Appellants erroneously interpret "the same patentable invention" as requiring identical claims, apparently in the sense of the "same invention" for same invention-type double patenting under 35 U.S.C. § 101, when the actual legal test of 37 CFR § 1.601(n) is anticipation or obviousness. No patentability analysis is provided by the Examiner. Nevertheless, Appellants admit that Woo anticipates claim 21 because it is said that Woo claims the five steps of claim 21 in addition to other steps (Br10). Woo recites that the etch stop layer prevents resputtering of the conductor during etching of the second dielectric layer, but does not recite etching the etch stop layer without resputtering, i.e., "without forming non-conductive back-sputtered compounds on sidewalls of the via." Nevertheless, one of ordinary skill in the art would have appreciated that etching of the etch stop layer should not cause back-sputtering or the purpose of using the etch stop layer would be negated. Appellants do not argue that the silicon nitride - 11 -Page: Previous 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 NextLast modified: November 3, 2007