Appeal No. 1999-2347
Application 08/892,560
The materials for the three layers and the two etch steps
are summarized below:
Claim 21
conductive layer: metal
etch stop layer: silicon nitride
dielectric layer: silicon dioxide
first etch step: dry anisotropic
second etch step: any that not produce
back-sputtering
Barber
conductive layer: polysilicon
etch stop layer: silicon nitride
dielectric layer: BPSG
first etch step: BCl3
second etch step: CHF3 and O2 gases
Erie
conductive layer: metal, e.g., aluminum/copper
etch stop layer: titanium oxide or other
(unspecified) material
dielectric layer: silicon dioxide
first etch step: plasma etch with first etch gas
second etch step: plasma etch with second etch gas
Kim
conductive layer: metal or doped polysilicon
etch stop layer: aluminum or magnesium oxide
dielectric layer: silicon oxide
first etch step: reactive ion etching
second etch step: BCl3 and O2 gases
THE REJECTIONS
Claim 27 stands rejected under 35 U.S.C. § 112, second
paragraph, as being indefinite for failing to particularly point
out and distinctly claim the subject matter which Applicants
regard as their invention.
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