Appeal No. 2001-2182 2
Application No. 08/948,895
pending in this application. Claims 6, 7, 9 through 14 and 16 through 20 were amended
subsequent to the final rejection.
THE INVENTION
The invention is directed to a method of improving adhesion of a fluorine
containing dielectric material to a substrate surface wherein an adhesion layer is deposited
on a metal substrate and a fluorine containing dielectric layer is thereafter deposited on the
adhesion layer. The method further requires that either SiN or SiON is deposited on
internal surfaces of a deposition chamber. The SiN or SiON blocks gassing of fluorine
from internal surfaces of the deposition chamber. In a further embodiment TiN is
deposited on the metal substrate and acts as an adhesion layer. The TiN is thereafter
exposed to nitrogen plasma. Additional limitations are described in the following
illustrative claims.
THE CLAIMS
Claims 1, 6 and 16 are illustrative of appellants’ invention and are reproduced
below.
1. A method of improving adhesion of a fluorine containing dielectric material to a
substrate surface, comprising:
depositing silicon nitride or silicon oxynitride on internal surfaces of a deposition
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