Appeal No. 2001-2182 6
Application No. 08/948,895
carbon film which may include fluorine therein. See page 3, lines 1-22 and Figure 3. In
Figure 3, a transistor was fabricated on a silicon substrate 31. See page 8, line 22. Silicon
dioxide films 32 were thereafter deposited on selected portions of the silicon substrate 31.
See page 8, lines 31-32. A first aluminum layer, 33, was thereafter deposited on portions
of layers 31 and 32. See Figure 3. Thereafter, an amorphous carbon film or a fluorinated
amorphous carbon film 34 is deposited on the aluminum layer followed by a second
aluminum layer 35. See Figure 3 and page 8, lines 27 -37. Absent from the disclosure of
EP’283 is a discussion of an adhesion layer, and the deposition of SiN or SiON, (silicon
nitride or silicon oxynitride) on internal walls of a deposition chamber.
Thereafter a series of secondary references is relied upon to disclose each of the
other elements of the claimed subject matter. EP’656 is relied upon by the examiner for
its disclosure of, “making a plasma self cleaning within a chamber using a gas which includes
fluorine, coating an inside of the chamber by a first layer of a material which includes
silicon and nitrogen.” See column 2, lines 1-7. The layer which coats the inside of the
chamber includes SiN and SiON as required by the claimed subject matter. See column 5,
lines 8-10. Accordingly, EP’656 discloses the element of “depositing silicon nitride or
silicon oxynitride on internal surfaces of a deposition chamber.”
In an alternative rejection, in place of EP’656, the examiner relies upon Sandhu
who discloses a method of inhibiting the deposition of material on the walls of a chemical
vapor deposition reactor. See column 1, lines 6-7 and column 3, lines 21-25. The
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