Appeal No. 2001-2182 3
Application No. 08/948,895
chamber in an amount sufficient to block out gassing of fluorine from the internal surfaces;
positioning a substrate comprising metal surfaces in the deposition chamber;
depositing at least one adhesion layer on the substrate; and
depositing a fluorine containing dielectric material on the adhesion layer.
6. A method of improving adhesion of a fluorine containing dielectric material to a
substrate surface, comprising:
depositing silicon nitride or silicon oxynitride on internal surfaces of a deposition
chamber in an amount sufficient to block out gassing of fluorine from the internal surfaces;
positioning a substrate comprising metal surfaces in the deposition chamber;
depositing a TiN layer on the substrate;
exposing the TiN layer to a nitrogen plasma; and then
depositing a fluorine containing dielectric material on the TiN layer.
16. The method of claim 6, wherein depositing the fluorine containing dielectric
material comprises:
introducing a carbon source gas and a fluorine source gas into the deposition
chamber, wherein the ratio of carbon gas source and fluorine gas source is selected to
maintain an atomic ratio of fluorine to carbon (F:C) less than about 2:1;
delivering a source power to the chamber sufficient to strike a plasma in the
chamber; and
applying a bias to a substrate support member in an amount above about 300W.
THE REFERENCES OF RECORD
As evidence of obviousness, the examiner relies upon the following references:
Shankar et al. (Shankar) 4,782,380 Nov. 01, 1988
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