Appeal No. 2001-2388
Application 09/151,948
THE REJECTIONS
The claims stand rejected as follows: claims 1-4, 6-15
and 17-21 over the appellant’s admitted prior art in view of
Huang, and claims 5, 16 and 22-27 over the appellant’s admitted
prior art in view of Huang and Jeong.
OPINION
We reverse the aforementioned rejections. We need to
address only claim 1, which is the broadest independent claim.
The appellant acknowledges (specification, page 2) that it
was known in the art to 1) form on a semiconductor substrate (10)
in the following order, as shown in figure 1, a barrier/glue
layer (20), first metal lines (22), an optional anti-reflective
coating (24), and an insulating layer (26), 2) form patterned
openings in the insulating layer, 3) fill the openings with
tungsten to form tungsten plugs (28), and 4) form over the
tungsten plugs, in the following sequence, a second barrier
layer (30), metal pixels (32), an undoped silicate
glass (34)/silicon nitride (36) passivation layer, a liquid
crystal layer (52), and a top substrate (56).
In the “description of the prior art” section of the
specification (pages 2-3) the appellant points out that the
thickness of the liquid crystal layer in figure 1 is less at
3
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