Appeal No. 2001-2590
Application No. 09/449,063
1339, 1340 n.2, 48 USPQ2d 1635, 1636 n.2 (Fed. Cir. 1998).
Consequently, we select claims 1, 7, and 13 (the broadest
independent claims) to be representative of the claims on appeal.
They read as follow:
1. A method of forming a multiple-thickness oxide layer on a
silicon substrate for use with transistors having different gate
oxide thicknesses, the method comprising:
a) forming a sacrificial oxide layer on the silicon
substrate;
b) patterning an implant mask layer on the siliocn
substrate to expose a selected first portion of the silicon
substrate;
c) implanting oxygen into the selected first portion of the
silicon substrate through the sacrificial oxide layer;
d) stripping the implant mask layer from the silicon
substrate;
e) stripping the sacrificial oxide layer; and
f) growing an oxide layer on the silicon substrate, the
oxide layer having an oxygen-implanted oxide region for the first
transistor gate oxide and a non-implanted oxide region for a
second transistor gate oxide.
7. A method of forming a multiple-thickness oxide layer on
a silicon substrate for use with transistors having different gate
oxide thicknesses, the method comprising:
a) forming a sacrificial oxide layer on the silicon
substrate;
b) patterning an implant mask layer on the silicon substrate
to expose a selected first portion of the silicon substrate for a
first transistor gate oxide;
c) implanting oxygen into the selected first portion of the
silicon substrate through the sacrificial oxide layer including
2
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