Appeal No. 2001-2590
Application No. 09/449,063
Wristers et al. (Wristers) 5,930,620 Jul. 27, 1999
Mogami 6,027,977 Feb. 22, 2000
(filed May 18, 1998)
The Rejections
Claims 1-6 stand rejected under 35 U.S.C. §103(a) as being
unpatentable over Hsu in view of Wristers.
Claims 7-8 and 10-12 stand rejected under 35 U.S.C. §103(a)
as being unpatentable over Hsu in view of Wristers as applied to
claims 1-6, and further in view of Barsan.
Claims 13-15 stand rejected under 35 U.S.C. §103(a) as being
unpatentable over Hsu in view of Mogami.
The Invention
The invention relates to a method for forming gate oxides for
transistor devices on a single semiconductor chip with the gate
oxides varying in thickness for different transistors. The method
steps are outlined in the reproduced claims above.
The Rejection of Claims 1, 3 and 5 Under 35 U.S.C. §103(a)
The examiner has found that Hsu teaches the invention
substantially as claimed with the exception of the oxidation
effecting material being implanted containing oxygen ions.
(Examiner’s Answer, page 3, line 17 - page 4, line 5). The
examiner has additionally found that Wristers discloses the
formation of gate oxides of different thicknessesand shows forming
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