Appeal No. 2001-2590
Application No. 09/449,063
implanting oxygen into a second portion of the silicon substrate
under the implant mask layer, the oxygen concentration in the
second portion being less than the oxygen concentration in the
first portion, and the oxide layer over the first portion being
thicker than the oxide layer over the second portion;
d) stripping the implant mask layer from the silicon
substrate;
e) stripping the sacrificial oxide layer; and
f) growing an oxide layer on the silicon substrate, the
oxide layer being thicker in the oxygen-implanted oxide region in
the selected first portion for the first transistor gate oxide.
13. A method of forming a multiple-thickness oxide layer on
a silicon substrate, the method comprising:
a) forming a high dielectric contrast dielectric layer on a
silicon substrate;
b) forming a polysilicon layer on the dielectric layer;
c) patterning an implant mask layer on the polysilicon
layer;
d) implanting oxygen through the polysilicon layer and into
the substrate;
e) stripping the implant mask layer from the substrate; and
f) annealing the substrate to form an interfacial oxide
layer in the substrate under the dielectric layer.
The References
In rejecting the claims under 35 U.S.C. §103(a), the examiner
relies upon the following references:
Hsu et al. (Hsu) 5,480,828 Jan. 02, 1996
Barsan et al. (Barsan) 5,672,521 Sep. 30, 1997
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