Appeal No. 2002-1411
Application No. 09/144,535
1. A semiconductor device, comprising:
a semiconductor substrate having a first
conductivity;
a first doped region in the substrate and having
the first conductivity;
a recess disposed in the first region and having a
sidewall and a bottom;
a gate insulator disposed on the substrate and
extending to the sidewall of the recess;
a gate electrode disposed on the gate insulator;
a body region disposed in a second region beneath
the gate electrode, the body region having a second
conductivity and being contiguous with the sidewall,
the body region being deeper than the recess, and being
self-aligned to the bottom of the recess, self-aligned
to the gate electrode at its outer perimeter,
self-aligned to the sidewall of the recess at its inner
perimeter, such that the body region is assured of
being generally symmetrical on all sidewalls and to the
bottom of the recess and present at the bottom corners
of the recess;
a source region disposed in the body region,
having the first conductivity, and being contiguous
with the sidewall;
a Schottky contact disposed on the bottom of the
recess; and
a source metallization disposed on the Schottky
contact and the sidewall of the recess.
2
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