Appeal No. 2002-1411
Application No. 09/144,535
32. A semiconductor device made by a method
comprising:
forming a gate structure on a semiconductor layer
that is disposed on a semiconductor substrate, the gate
structure exposing a portion of the layer to form an
opening;
implanting a first dopant of a first conductivity
and a second dopant of a second conductivity through
the opening into the exposed portion of the
semiconductor layer, such that regions implanted with
the first and second dopants are self-aligned to the
opening;
after implanting the first and second dopants,
recessing the exposed portion of the semiconductor
layer, wherein the recessed exposed portion is
self-aligned to the opening;
driving the first dopant deeper into the
semiconductor layer after recessing the exposed
portion;
driving the first dopant deeper into the
semiconductor layer than a bottom of the recessed
exposed portion such that the first dopant is
self-aligned to the exposed portion such that the first
dopant is self-aligned to the sidewall of the recess at
its inner perimeter and present at the bottom corners
of the recess;
after recessing the exposed portion, forming a
Schottky contact on a bottom of the exposed portion;
and
forming a source metallization on the Schottky
contact and a sidewall of the exposed portion.
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