Appeal No. 2003-0123
Application No. 09/383,781
1443, 1445, 24 USPQ2d 1443, 1444 (Fed. Cir. 1992); In re Piasecki, 745 F.2d
1468, 1471-72, 223 USPQ 785, 787-88 (Fed. Cir. 1984).
Rather than reiterate the conflicting viewpoints advanced by the Examiner
and Appellants concerning the above-noted rejection, we refer to the Answer and
the Brief and Reply Brief. Appellants’ invention is directed to a method for
providing an imaging path in a silicon surface that has been impaired by thinning.
More specifically, Appellants’ invention relates to a method for providing an
imaging path in the backside of a semiconductor device such as a flip chip for
subsequently obtaining an image of circuitry as viewed from the back side.
(Specification p. 5). Claims 1, 4 and 9, which are representative of the claimed
invention, appear below:
1. A method for providing an imaging path in a semiconductor device
having a circuit side underlying silicon material, the method
comprising:
etching away some of the silicon material and forming a target
surface; and
laser-thermal annealing the silicon material by laser-scanning the
target surface, and therein clearing a viewing path under the target
surface.
4. A method for providing an imaging path that has been impaired by
crystal defects formed as a result of applying a high temperature to the
back side of the semiconductor device while thinning the back side
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