Appeal No. 2003-0123
Application No. 09/383,781
using a laser at an energy level greater than or equal to a first energy
level, the method comprising:
scanning the back side of the semiconductor device using the laser
applied at an energy level that is less than the first energy level and
using the applied laser to reduce crystal defects.
9. For use with a semiconductor device having a circuit side and a
back side, a method for obtaining images via the back side of the
semiconductor device, the method comprising:
laser-chemical etching the back side of the semiconductor device in
vacuum and at a first power level;
reducing the vacuum and scanning the back side of the semiconductor
device using a laser operating at a power level that is less than the first
power level; and
using light to capture an image of a circuit through the back side of
the semiconductor device.
The Examiner has rejected claims 1 to 3, and 28 as unpatentable under 35
U.S.C. § 103(a) as obvious over the combination of Makita and Ohtani; and claim
27 as unpatentable under 35 U.S.C. § 103(a) as obvious over the combination of
Makita, Ohtani and Nishida.
Since we reverse the Examiner’s rejection, we need to address only the
independent claim, i.e., claim 1.
In holding an invention obvious in view of a combination of references, there
must be some suggestion, motivation, or teaching in the prior art that would have
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