Appeal No. 2003-0123
Application No. 09/383,781
result, two kinds of crystalline silicon films having different crystallization
processes are obtained. (Col. 5, ll. 18-28). Tanaka does not disclose the treatment
of the backside of the semiconductor device.
Takemura discloses the manufacture of a semiconductor integrated circuit
wherein the backside silicon is thinned by dry etching. (Col. 2, ll. 48-64).
Takemura discloses that the etching is stopped prior to reaching the above laying
silicon oxide layer to prevent damage to the device. (Col. 3, ll. 1-5). Takemura does
not discuss thinning to provide an image path to the circuit layer.
The Examiner concludes, Answer page 5, “[i]t would have been obvious to
one of ordinary skill in the art, at the time [of] invention[,] to modify Tanaka in
view of Takemura by thinning the backside because it will help to improve the
transparent optical property of the substrate. Further as the silicon substrate is
thinned, the insulation performance of the substrate is enhanced (col. 2 lines 30-35
in Takemura ‘242 reference).”
The method of claim 4 requires scanning the back side of the semiconductor
device using the laser applied at an energy level that is less than the first energy
level and applied laser to reduce crystal defects. Tanaka discloses the two-step
illumination acts such that amorphous portions remaining in a film are crystallized
in the first illumination and crystallization is accelerated over the entire film in the
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