Appeal No. 2003-1195
Application No. 08/526,339
Representative independent claim 1 is reproduced as follows:
1. A silicon on insulator self-aligned transistor,
comprising:
a substrate composed of insulator material;
a layer of doped polysilicon on a surface of said substrate,
said layer of polysilicon having sections defining therein a
polysilicon source, a polysilicon gate, and a polysilicon drain;
a layer of oxide material adjacent and in contact with a
surface of said layer of polysilicon, said layer of oxide
material having holes therein containing doped polysilicon in
contact with said polysilicon source and said polysilicon drain;
a layer of silicon of conductivity type 1 adjacent and in
contact with a surface of said layer of oxide material;
a diffused source and a diffused drain located in said layer
of conductivity type 1 silicon and in contact with said
polysilicon source and said polysilicon drain via said doped
polysilicon contained in said holes in said layer of oxide
material; and
a pair of bridge regions located in said layer of
conductivity type 1 silicon and in electrical contact with said
diffused source and said diffused drain guaranteeing electrical
contact with an inversion region located under said layer of
oxide material covered by said polysilicon gate.
The examiner relies on the following references:
Zavracky et al. (Zavracky) 5,206,749 Apr. 27, 1993
Spangler et al. (Spangler) 5,343,064 Aug. 30, 1994
Inoue et al. (Inoue) 5,434,441 Jul. 18, 1995
Claims 1-10 and 25-35 stand rejected under 35 U.S.C. § 112,
second paragraph.
-2-
Page: Previous 1 2 3 4 5 6 7 8 9 10 Next
Last modified: November 3, 2007