Ex Parte MCCARTHY - Page 4




          Appeal No. 2003-1195                                                        
          Application No. 08/526,339                                                  


          particularity.  It is here where the definiteness of the language           
          employed must be analyzed–not in a vacuum, but always in light of           
          the teachings of the prior art and of the particular application            
          disclosure as it would be interpreted by one possessing the                 
          ordinary skill in the pertinent art.  In re Moore, 439 F.2d 1232,           
          1235, 169 USPQ 236, 238 (CCPA 1971).                                        
               Applying this test to the instant claims, we find that the             
          instant claims do, indeed, set out and circumscribe a particular            
          area with a reasonable degree of precision and particularity and            
          do not run afoul of the dictates of 35 U.S.C. § 112, second                 
          paragraph.  It is clear from the instant specification, at                  
          page 6, that there is a diffused source 15 and a diffused                   
          drain 16, in addition to sections within the polysilicon layer              
          defining a source 21 and a drain 23.  When the instant claimed              
          subject matter is read in light of the specification, we find no            
          ambiguity in the claim language whatsoever.                                 
               The rejection of claims 1-10 and 25-35 under 35 U.S.C.                 
          § 112, second paragraph, is reversed.                                       
               Turning now to the rejections under 35 U.S.C. § 103, the               
          examiner employs the cover figure of Spangler for a showing of a            
          substrate composed of insulator material, at least a layer of               
          doped polysilicon on the substrate surface, with source, gate and           


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