Appeal No. 2003-1300
Application No. 09/643,372
etching a first opening in said first dielectric
material layer by reactive ion etching to expose said
first conductive region in the substrate,
depositing a second conductive material into said
first opening in said first dielectric material layer
forming a body portion of the conductor,
removing a surface layer of said second
conductive material to at least partially expose an
upper sidewall surface in aid [sic] first opening,
forming sidewall spacers of a second dielectric
material on said upper sidewall surface of said first
opening thereby defining a second opening through
which said body portion of the conductor is exposed,
and
depositing a third conductive material into said
second opening and forming a neck portion of the
conductor that is in contact with the body portion of
said conductor, said neck portion having a diameter at
a top surface of the neck portion smaller than a
diameter of said body portion.
44. A method for fabricating a dual-diameter
electrical conductor comprising the steps of:
providing a substrate having a first conductive
region formed of a first conductive material,
depositing a layer of a first dielectric material
on said substrate,
etching a first opening in said first dielectric
material to expose said first conductive region in the
substrate,
depositing a second conductive material into said
first opening in said first dielectric material layer
forming a body portion of the conductor,
removing a surface layer of said second
conductive material to at least partially expose an
upper sidewall surface in said first opening,
forming sidewall spacers of a second dielectric
material on said upper sidewall surface of said first
opening thereby defining a second opening through
which said body portion of the conductor is exposed,
depositing a third conductive material into said
second opening and forming a neck portion of the
conductor that is in contact with the body portion of
said conductor, said neck portion having a diameter at
3
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