Interference No. 105,113
transfer wafers between the SRD modules 238 in SRD station 212 and the four electrolytic
processing cells 240 in processing stations 218.
Referring to Cheung's Figure 17, reproduced below, numeral 211 designates a "rapid
thermal anneal" (RTA) chamber having an enclosure 902 which includes a base 908, a sidewall
910, and a top 912
(col. 19, ll. 39-42).
Count 1 is defined in the "Notice Declaring Interference"5 (at 5) as "A deposition system
according to claim 12 of [Cheung] U.S. Patent No. 6,136,163." That claim is reproduced below
with the addition of reference numerals from Cheung's Figure 3:
5 Paper No. 1.
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