Interference No. 105,113
11. [(a)] In semiconductor substrate processing apparatus, chambers are
typically used when the particular process requires a controlled gaseous
environment, e.g., sputtering deposition and chemical vapor deposition.
[(b)] Traditionally annealing of a metal refers to the application of heat to cause a
change in the grain structure of the metal. [(c)] Annealing processes may or may
not require a controlled gaseous environment. [(d)] E.g. metals such as gold and
other noble metals are relatively inert in the presence of oxygen at elevated
temperatures so a controlled gaseous anneal environment is not necessary.
[(e)] The gaseous environment during anneal for non-noble metals such as Cu
[copper] may also not need to be controlled if the anneal temperatures and times
are relatively low, e.g., in the vicinity of 100 °C for 30 minutes, since the
oxidation rates at these temperatures are relatively low. [(f)] However, for anneal
temperatures in the range of 250 °C - 400 °C, the oxidation rates of Cu are
substantial, and therefore strict control of the gaseous environment is required. . . .
[(g)] Clearly annealing in [a] temperature range[] of 250°C - 400 °C requires a
chamber to provide a controlled gaseous environment..
. . . .
16. One skilled in the art reading claims 68, 70, 73 of the Ritzdorf
application . . . would understand that the "annealing chamber" of claim 70 and
the "thermal anneal chamber" of claims 68 and 73 would have an enclosure, based
upon the normal, dictionary meaning of the word "chamber" as an "enclosed
space" and the use of chambers to provide controlled gaseous environments when
needed in semiconductor processing, even though the Ritzdorf specification
(Cheung Exh. 2002) did not include a chamber.
In view of Cheung's above-noted concession at oral hearing that the term "chamber" does not
imply the presence of a top, Dr. Geffken's paragraph 16 testimony is unconvincing to the extent
offered to prove that "chamber" in and of itself implies a sealed enclosure having a top, bottom,
and sides. For the same reason, his sentence (a) assertion that "chambers" are used to control
gaseous environments during sputtering deposition and vapor deposition is based on an unduly
narrow interpretation of that term. His sentence (b) assertion that the traditional meaning of
annealing of a metal refers to the application of heat to cause a change in its grain structure of a
metal and his sentence (c) assertion that annealing processes may or may not require a controlled
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