CHEUNG et al vs. RITZDORF et al - Page 19




                Interference No. 105,113                                                                                                      

                         On the other hand, we agree with Ritzdorf that the following passage demonstrates an                                 
                intent to employ an annealing "oven" in Ritzdorf's invention:                                                                 
                                 In accordance with a still further embodiment of the method, the copper                                      
                         metallization layer may be annealed before or after chemical mechanical polishing                                    
                         at an elevated temperature which is substantially below the temperature used in                                      
                         the annealing processes that have been traditionally employed.  To this end, the                                     
                         wafer having the metallization layer may be placed in an oven having a                                               
                         temperature that is substantially below the 400 degrees Celsius traditionally                                        
                         thought to be necessary to promote the annealing process of copper having such                                       
                         small grain sizes.  At a low temperature of about 60 degrees Celsius, the annealing                                  
                         process may be completed in about 15 minutes.  At temperatures above 100                                             
                         degrees Celsius, the annealing times become so short (<1 minute) so as to make                                       
                         annealing at higher temperatures unwarranted and wasteful.                                                           
                '613 application at 18, ll. 5-13 (our emphasis).  Cheung does not deny that such an annealing                                 
                "oven" constitutes an "annealing chamber" in the sense of  Ritzdorf's claims.  Instead, Cheung                                
                denies that this annealing oven is described in the specification as part of a plating "system"                               
                which also includes the other elements recited in Ritzdorf's claims.  Reply 2, at 7.  This argument                           
                overlooks the fact that the above-quoted discussion of using an annealing "oven" in the invention                             
                is preceded by a discussion of using the electrochemical deposition apparatus of Figure 1 to form                             
                the copper metallization (id. at 13, l. 4 to p. 15, l. 15) and the statement that "[s]ubsequent rinsing                       
                and drying steps may be executed on the wafer in, for example, other processing chambers                                      
                dedicated to such functions."  Id. at 15, l. 21 to p. 16, l. 1.  Thus, the inventors contemplated                             
                using the annealing oven as part of a system includes all of these components.  Furthermore,                                  
                although the specification does not explain how wafers are moved in and out of such a system                                  
                and between the system components, it is evident that some known type of wafer transferring                                   
                apparatus must have been contemplated for that purpose, such as the robots 620 and track 625 in                               
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