Interference No. 105,113
robots 620, while the claimed second robot can be read on the combination of one of robots 620
and robot 640. Preliminary Motion 2 is therefore denied with respect to claim 72.
Claim 74, which depend on claim 73, specifies that "the thermal anneal chamber
comprises a rapid thermal anneal chamber having a heater plate." The motion, citing paragraph
17 of Dr. Geffken's testimony, argues:
As noted by Dr. Geffken, the term "rapid thermal anneal" is synonymous
with a rapid rise in the temperature of a wafer followed by a rapid decrease in
wafer temperature. The Ritzdorf specification repeatedly touts creating a
temperature gradient across the copper film by employing heater apparatus that
heat one side of the wafer at the same time the other side is being actively cooled,
something that would prevent it from functioning as a rapid thermal anneal heater.
There is also no mention in the Ritzdorf application of subsequent rapid decrease
in wafer temperature that is also characteristic of rapid thermal anneal processes.
(Cheung Exh. 2009, ¶ 17) (Cheung Fact 26)..
Motion 2, at 23. Ritzdorf's opposition does not question Dr. Geffken's definition of "rapid
thermal anneal" as requiring a rapid increase in wafer temperature followed by rapid decrease in
temperature. Furthermore, although Ritzdorf alleges that rapid heating is shown in Figures 9 and
10, reproduced below, which the specification characterizes as demonstrating that "[h]igher
magnitude ramp rates will result in larger temperature gradients, particularly at the end of the
ramp" ('613 specification at 24, ll. 15-16), Ritzdorf does not explain -- nor is it apparent to us --
where the '613 specification describes subsequent rapid cooling.
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