Appeal No. 2004-2192
Application No. 09/414,520
APPENDIX
1. In a plasma processing apparatus for etching an electrically
insulating film, the plasma processing apparatus having a vacuum
processing chamber, a sample table for mounting a sample which is
processed in said vacuum processing chamber, and a plasma
generation means, wherein a plasma processing is carried out by
generating a plasma in response to introduction of a gas which
contains at least carbon and fluorine, and a gas species is
generated which contains carbon and fluorine according to a
plasma dissociation, the plasma processing apparatus comprising :
plasma generation means comprising an electron cyclotron
resonance system in which a microwave is provided having a
frequency of from 300 MHz to 1 GHz and which generates a plasma
in which the degree of plasma dissociation is an intermediate
degree and said gas species containing carbon and fluorine is
generated fully in the plasma, and a temperature of a region
which forms a side wall of said vacuum processing chamber is
controlled to have a range of 10°C to 120°C and wherein the
sample for etching by the plasma is an insulating film.
2. A plasma processing apparatus according to Claim 1, wherein
said plasma generation means is a source of plasma in which
an electron energy is in a range of from 0.25 eV to 1 eV.
4. A plasma processing apparatus according to claim 1, wherein
in said plasma generation means, a drive of a plasma exciting
power supply is carried out intermittently.
5. A plasma processing apparatus according to any one of Claim
1, Claim 2 or Claim 4, wherein
as a means for adjusting a temperature of said vacuum wall,
a temperature adjusted coolant medium is used.
6. In a plasma processing method using a vacuum processing
chamber, a sample table for mounting a sample which is processed
in said vacuum processing chamber wherein the sample is an
electrically insulting film, and a plasma generation means,
wherein a plasma processing is carried out by generating a plasma
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