Appeal No. 2005-0155 Application No. 09/760,884 The examiner finds (Answer, page 4) that Chen discloses a method for fabricating electronic structures wherein a barrier layer 10 is formed on the bottom and side walls trenches 5 or vias of an insulating layer 8 (fig. 2A; page 12 to page 13). The electronic structure may include a semiconductor (substrate) covered with the insulating material (page 2). Copper is electroplated directly onto the barrier layer 10 (page 12, line 5). In an example depicting the enhancement of a thin seed layer, Figures 2B and 2C illustrate copper 18 being electroplated directly on the barrier layer 10 on the bottom and side walls in discontinuities present within a thin seed layer 15 (see fig. 2B and 2C). The electroplating bath is comprised of copper sulfate, as a source of cupric ions, and a completing agent and may also contain other additives (page 16). The bath is maintained at a pH of at least 9.0 and can have a pH of 5-13 (page 17). The current density used for electroplating “can be 1 to 5 milliamps/cm2", which contains the endpoint of the claimed range (page 18). The examiner acknowledges that Chen is silent as to how the trenches or vias are formed on its insulating material coated substrate and that Chen does not mention an electroplating bath containing cyanide ions and a stabilizing agent. See the Answer, page 5. To remedy the above deficiencies, the examiner relies on the disclosures of Landau and Ting. See the Answer, pages 6-7. The examiner correctly finds that Landau teaches advantages of employing lithographic techniques for making trenches or vias on an insulating layer of the substrate of the type described in Chen in a similar method. See the Answer, page 6. The examiner 4Page: Previous 1 2 3 4 5 6 7 8 9 NextLast modified: November 3, 2007