The opinion in support of the decision being entered today was not written
for publication and is not binding precedent of the Board.
UNITED STATES PATENT AND TRADEMARK OFFICE
____________
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
____________
Ex parte YOUICH ISHIMURA
and YOSHIFUMI TOMOMATSU
____________
Appeal No. 2005-0285
Application No. 09/881,675
____________
HEARD: May 4, 2005
____________
Before KRASS, BARRY, and SAADAT, Administrative Patent Judges.
KRASS, Administrative Patent Judge.
DECISION ON APPEAL
This is a decision on appeal from the final rejection of
claims 1-10.
The invention is directed to a field-effect semiconductor
device. In particular, an insulated gate bipolar transistor is
provided whereby nitrogen is included in a barrier metal layer
for improving threshold voltage characteristics after annealing
processing.
Representative independent claim 1 is reproduced as follows:
1. A field-effect semiconductor device having a
semiconductor layer of a first conductivity type, a collector
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