Appeal No. 2005-0285 2
Application No. 09/881,675
region of a second conductivity type that is formed beneath said
semiconductor layer and equipped with a collector electrode on
its lower surface, a base region of the second conductivity type
that is formed as part of the upper surface of said semiconductor
layer, at least one pair of emitter regions of the first
conductivity type that are formed as part of the upper surface of
said base region, an insulating layer that is formed to contact
said base region that is located between said emitter regions and
said semiconductor layer, a gate electrode that is placed on the
upper surface of said insulating layer, an interlayer insulating
film that is formed to cover said gate electrode, a barrier metal
layer that is formed to continuously contact said interlayer
insulating film, base region, and emitter regions, and an emitter
electrode that is formed on the upper surface of said barrier
metal layer, characterized in that said barrier metal layer that
is formed between said emitter electrode and said interlayer
insulating film comprises a layer containing nitrogen.
The examiner relies on the following references:
Kim et al. (Kim) 6,229,166 May 8, 2001
Sakurai et al. (Sakurai) 5,962,877 Oct. 5, 1999
Okamoto et al. (Okamoto) 4,903,117 Feb. 20, 1990
Ichii, et al. (Ichii) 11-284176 Oct. 15, 19991
(Japanese document)
In addition, the examiner relies on the admitted prior art
[APA] of Figure 6 of the instant application.
Claims 1-10 stand rejected under 35 U.S.C. §103. As
evidence of obviousness, the examiner offers Sakurai, the
Japanese document, and Okamoto with regard to claims 1-3, and 5,
1
1We rely on an English translation of this Japanese document
prepared by the Ralph McElroy Translation Company for the United
States Patent and Trademark Office, for our understanding of this
reference.
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