Appeal No. 2005-0285 4
Application No. 09/881,675
the references. In re Fine, 837 F.2d 1071, 1074, 5 USPQ2d 1596,
1598 (Fed. Cir. 1988).
In the instant case, with regard to independent claim 1,
the examiner asserts that Sakurai discloses a field effect
semiconductor device, in Figure 9b, having a semiconductor layer
2 of a first conductivity type (n-type), a collector region 1 of
a second conductivity type (p-type) that is formed beneath the
semiconductor layer and equipped with a collector electrode 13 on
its lower surface, a base region 3 of the second conductivity
type that is formed as part of the upper surface of the
semiconductor layer, at least one pair of emitter regions 4 of
the first conductivity type, formed as part of the upper surface
of the base region, an insulating layer 10 that is formed to
contact the base region that is located between said emitter
regions and the semiconductor layer, a gate electrode 11 that is
placed on the upper surface of the insulating layer, an
interlayer insulating film 14 that is formed to cover the gate
electrode, and an emitter electrode 12 that is formed over the
interlayer insulating film, base region, and emitter regions.
We agree. We also agree with the examiner that Sakurai does
not disclose a barrier metal layer formed to continuously contact
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