Appeal No. 2005-0287 Page 2
Application No. 09/216,214
9. A transistor gate structure, comprising:
(a) a gate dielectric over a semiconductor region;
(b) a patterned gate over said gate dielectric
having sidewalls, a top surface and a bottom surface
disposed on said gate dielectric;
(c)a lateral growth on said gate dielectric at the
corners of said gate, but not under central
regions of said gate, the thickness of said gate
dielectric continually increasing at the
interface of said bottom surface and said sidewalls of
said gate in a direction from said bottom surface
toward and along said sidewalls; and
(d) a unitary electrically conductive metallic
material entirely covering said sidewalls and top
surface of said gate.
10. A transistor structure which comprises:
a region of semiconductor material having a gate
dielectric thereover;
a polysilicon gate disposed over said gate
dielectric having a top, a bottom and sidewalls;
a silicide layer disposed on said top and
sidewalls of said polysilicon gate; and
source/drain regions in said region of
semiconductor material spaced apart from each
other, said source/drain regions each disposed
adjacent to and aligned with said silicide layer disposed on said side
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Next
Last modified: November 3, 2007