Appeal No. 2005-0287 Page 5
Application No. 09/216,214
how the specification accomplishes this is not material. See In
re Kaslow, 707 F.2d 1366, 1375, 217 USPQ 1089, 1096 (Fed. Cir.
1983); In re Edwards, 568 F.2d 1349, 1351-2, 196 USPQ 465, 467
(CCPA 1978).
The examiner has rejected claim 10 as not being described in
the specification in such a way as to reasonably convey to one
skilled in the relevant art that the inventor(s), at the time the
application was filed, had possession of the claimed invention.
(answer, page 4).
The examiner has stated that descriptive support in the
original disclosure could not be found because no support could
be located in the original application disclosure for the claim
10 requirement that the source/drain regions are aligned with the
silicide layer located on the polysilicon gate sidewalls (answer,
pages 3 and 4). Concerning this matter, at page 8, lines 3-18 of
the subject specification, appellant provides a detailed
description as follows:
Lightly-doped-drain extension regions (LDD regions
70) are then formed (step 130) by implantation of the
exposed active area. This is followed by conformal
deposition (step 140) of a metal 50, such as 20 nm of
titanium, which will be used to form a silicide. This
gives the structure shown in FIG. 2C. After deposition,
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