Appeal No. 2005-0479
Application No. 08/801,812
melting point greater than or equal to that of a material from
which the seed layer is composed;
forming an electrically conductive layer on the seed layer
including the portion of the seed layer within said recess, the
material from which the diffusion barrier layer is composed
having a melting point greater than that of a material from which
the electrically conductive layer is composed, the material from
which the seed layer is composed having a melting point greater
than or equal to that of the material from which the electrically
conductive layer is composed;
forming an energy absorbing layer on said electrically
conductive layer, said energy absorbing layer having a greater
thermal absorption capacity than that of said electrically
conductive layer;
applying, omnidirectionally, energy to said energy absorbing
layer to cause said electrically conductive layer to flow within
said recess; and
removing portions of the energy absorbing layer and the
electrically conductive layer that are situated above the top
surface of the dielectric material.
46. A method for manufacturing an interconnect structure, the
method comprising:
forming a dielectric material over a semiconductor substrate
and having a top surface;
forming a recess within the dielectric material extending
from the top surface of the dielectric material to the
semiconductor substrate;
filling the recess with an electrically conductive material,
wherein filling the recess with the electrically conductive
material further comprises:
forming a diffusion barrier layer in contact with the
semiconductor substrate and the dielectric material;
forming a seed layer upon the diffusion barrier layer
and composed of a material having a melting point less than
-2-
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007