Appeal No. 2005-0479
Application No. 08/801,812
that of the material from which the diffusion barrier layer
is composed and being selected from a group consisting of
ceramics, metallics, and intermetallics;
forming a conductor layer upon the seed layer including
the portion of the seed layer within said recess; and
forming an energy absorbing layer on the conductor
layer that is composed of a material having both a higher
thermal insulation capacity and electric insulation capacity
than that of the material from which the conductor layer is
composed;
wherein the recess includes:
a first portion having an uniform width and extending within
the dielectric material to the top surface of the dielectric
material;
a second portion having a height and a uniform width that is
less than the width of the first portion and that is not greater
than 25% of the height, the second portion extending from the
semiconductor substrate to terminate at the first portion; and
wherein the filling the recess is performed by causing the
electrically conductive material to flow within the recess by
applying omnidirectional heating.
The examiner relies upon the following references as
evidence of obviousness:
Xu et al. (Xu '461) 5,847,461 Dec. 8, 1998
Yim 5,869,395 Feb. 9, 1999
Xu et al. (Xu '721) 6,217,721 B1 Apr. 17, 2001
Appellant's claimed invention is directed to a method for
making an interconnect structure which entails forming diffusion
barrier, seed and electrically conductive layers within a recess
in a dielectric material situated on a substrate. The
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