Ex Parte Hwang et al - Page 1

               The opinion in support of the decision being entered                   
               today was not written for publication in a law journal                 
               and is not binding precedent of the Board.                             

                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                     Ex parte JACK HWANG and MITCHELL C. TAYLOR                       
                                Appeal No. 2005-0579                                  
                             Application No. 09/887,910                               
                                      ON BRIEF                                        
          Before KIMLIN, WARREN and KRATZ, Administrative Patent Judges.              
          KIMLIN, Administrative Patent Judge.                                        

                                 DECISION ON APPEAL                                   
               This is an appeal from the final rejection of claims 1-22.             
          Claim 1 is illustrative:                                                    
          1.   A method of making a semiconductor transistor, comprising:             
               locating a substrate of a doped semiconductor material in a            
               introducing a gas into the chamber;                                    
               repeatedly increasing and decreasing a plasma generating               
          voltage potential across the gas in the chamber between a cathode           
          and an anode while the substrate is in the chamber, a transient             
          ion plasma generating from the gas after an increase in magnitude           
          of the plasma generating voltage potential and degenerating after           


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