The opinion in support of the decision being entered
today was not written for publication in a law journal
and is not binding precedent of the Board.
UNITED STATES PATENT AND TRADEMARK OFFICE
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
Ex parte JACK HWANG and MITCHELL C. TAYLOR
Appeal No. 2005-0579
Application No. 09/887,910
ON BRIEF
Before KIMLIN, WARREN and KRATZ, Administrative Patent Judges.
KIMLIN, Administrative Patent Judge.
DECISION ON APPEAL
This is an appeal from the final rejection of claims 1-22.
Claim 1 is illustrative:
1. A method of making a semiconductor transistor, comprising:
locating a substrate of a doped semiconductor material in a
chamber;
introducing a gas into the chamber;
repeatedly increasing and decreasing a plasma generating
voltage potential across the gas in the chamber between a cathode
and an anode while the substrate is in the chamber, a transient
ion plasma generating from the gas after an increase in magnitude
of the plasma generating voltage potential and degenerating after
-1-
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