Appeal No. 2005-0579
Application No. 09/887,910
a decrease in magnitude of the plasma generating voltage
potential;
repeatedly increasing and decreasing an implantation voltage
potential between the ion plasma and the substrate, ions of the
plasma accelerating towards and implanting into a gate dielectric
layer formed on the substrate after an increase in magnitude of
the implantation voltage potential; and
forming a conductive transistor gate on the dielectric layer
implanted with the ions.
The examiner relies upon the following references as
evidence of obviousness:
Aronowitz et al. 6,087,229 Jul. 11, 2000
(Aronowitz)
Goeckner et al. 6,335,536 B1 Jan. 1, 2002
(Goeckner) (filed Oct. 27, 1999)
Chen 6,432,780 B2 Aug. 13, 2002
(filed Feb. 28, 2001)
Appellants' claimed invention is directed to a method of
making a semiconductor transistor which comprises repeatedly
increasing and decreasing an implantation voltage potential
between an ion plasma and a substrate of a doped semiconductor
material. The ion plasma is generated from a gas, such as
nitrogen, and the ions are accelerated towards and implanted into
a gate dielectric layer on the substrate. A conductive
transistor gate is formed on the dielectric layer that is
implanted with the ions.
Appealed claims 1-12, 14, 15 and 20-22 stand rejected under
35 U.S.C. § 103(a) as being unpatentable over Goeckner in view of
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