Ex Parte Ng - Page 1



              The opinion in support of the decision being entered today was          
              not written for publication and is not precedent of the Board.          

                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                    ____________                                      

                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                                    ____________                                      
                                Ex parte HUNG YIP NG                                  
                                     ___________                                      

                                Appeal No. 2005-0585                                  
                             Application No. 09/821,478                               
                                    ____________                                      
                                      ON BRIEF                                        
                                    ____________                                      
          Before GARRIS, OWENS, and PAWLIKOWSKI, Administrative Patent                
          Judges.                                                                     
          PAWLIKOWSKI, Administrative Patent Judge.                                   

                                  DECISION ON APPEAL                                  
               This is a decision under 35 U.S.C. § 134 from the                      
          examiner’s final rejection of claims 1, 3, 4-8, 10-14, and 16-              
          20.                                                                         
               Claims 1 and 4 are representative of the subject matter on             
          appeal, and are set forth below:                                            
                    1. A method of forming a semiconductor device,                    
               comprising:                                                            
                    lithographically patterning a structure having a                  
               first critical dimension, wherein said structure                       
               includes nested features and an isolated feature;                      
                    etching said structure with an O2-containing                      
               material to trim said first critical dimension to a                    




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