Appeal No. 2005-0585
Application No. 09/821,478
by this process (col. 7, lines 45-67). The etch chemistries are
adjusted between the sputtering and etching species to bring
about the variable etch rates (fig. 5-8). Answer, page 7.
The examiner states that Horak, Ma and Tao solve the
problem of etch bias, and attempt to form narrow gates with
consistent CDs. Answer, pages 7-8.
The examiner concludes that it would have been obvious to
one of ordinary skill in the art to have compensated for the
etch bias of nested and isolated lines by biasing the etch-
masks, as taught by Horak, using the teachings of Ma and Horak,
to set the etching parameters in Tao’s trimming process, because
Ma teaches that varying the above-discussed parameters reduces
microloading, and increases the process window (col. 3, lines
15-27), while Horak teaches that this facilitates the design
process for producing consistent products (col. 2, lines 45-65).
Answer, pages 7-8.
B. Appellant’s Position
Appellant’s position regarding the examiner’s rejection is
set forth on pages 4-12 of the brief.
Appellant first argues that Tao, Ma, and Horak would not
have been combined as alleged by the examiner because the
references are directed to completely different matters and
problems. Brief, page 8.
Appellant argues that Tao is directed to forming a very
narrow polysilicon gate line (col. 1, lines 65-67) using a
consumable hard mask of silicon oxynitride covered by a thin
layer of silicon oxide during the etching of the polysilicon
(col. 2, lines 6-9). Appellant states that Tao combines the
functions of the anti-reflection coating function, and the
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