Appeal No. 2006-1545
Application 10/254,326
heterojunction PN diode formed from two semiconductor materials
having different band gap energy levels, which increases the
forward-to-reverse current ratio.
Claim 42 is reproduced below.
42. A semiconductor structure comprising:
a first conductor and a second conductor;
a steering element in circuit communication with the
first conductor and comprising at least first and second
semiconductor materials, the first semiconductor material
having a first band gap energy level, the second
semiconductor in electrical communication with the first
semiconductor and having a second band gap energy level,
wherein the second band gap energy level is different from
the first band gap energy level; and
a state change element in circuit communication with
the steering element and the second conductor and comprising
a selectable high impedance state and a selectable low
impedance state.
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Last modified: November 3, 2007