Appeal No. 2006-1545
Application 10/254,326
THE REFERENCES
The examiner relies on the following references:
Fang et al. (Fang) 5,670,414 September 23, 1997
Zhang 5,835,396 November 10, 1998
Shimogaki et al. JP 10079521 March 24, 1998
(Shimogaki)
THE REJECTIONS
Claims 42-46, 53, and 56 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over Zhang and Shimogaki. The
examiner finds that Zhang discloses a memory device with first
and second conductors; a steering element with first and second
semiconductor layers forming a PN diode; and an antifuse. The
examiner finds that Zhang does not disclose the semiconductor
layers forming the PN diode having different band gap energy
levels, but that Shimogaki discloses that a heterojunction PN
diode shows enhanced rectification characteristics. The examiner
concludes that it would have been obvious to use the
heterojunction diode of Shimogaki in Zhang to enhance operation.
Claims 47-52, 54, and 55 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over Zhang and Fang. Since these
claims depend directly or indirectly from claim 42, we assume the
rejection is over Zhang, Shimogaki, and Fang.
We refer to the final rejection and the examiner's answer
(pages referred to as "EA__") for a statement of the examiner's
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