Appeal 2006-2671
Application 09/508,572
provides inter-layer connectivity . . . or a contact for a terminal . . . of a
semiconductor device” (id., col. 3, ll. 3-9). One of ordinary skill in this art
would have reasonably inferred the conductive layer in this embodiment
includes the protective metal layer (see id., e.g., col. 2, ll. 31-38, col. 7,
ll. 37-39, and col. 8, ll. 45-48).4
Merchant illustrates in Fig. 3, a cross-sectional view of device of Fig.
1 with “a conductive layer partially deposited in the via;” in Fig. 4, a cross-
section of device of Fig. 3 “with a metal protective layer deposited over the
conductive layer prior to its diffusion in the conductive layer;” and in Fig. 5,
a cross-section of the device of Fig. 4 “after the device has been subjected to
a reflow process” (Merchant, col. 3, ll. 48-55). Merchant’s Fig. 3 shows
substrate 10 with contact or via opening 14 formed through insulating layer
12, on which barrier layer 18 is “uniformly deposited,” and then conductive
metal layer 20 is deposited and reflowed to “uniformly fill and contact the
sides of the opening 14” (id., col. 4, ll. 5-18 and 44-65). We find one of
ordinary skill in this art in light of this disclosure would have found from
Merchant’s Fig. 3 that a portion of conductive metal layer 20 has a
depression extending into opening 14 which covers the sides of the opening
and is of reduced thickness compared to the portion of the layer extending
English Language 1228,1412.
4 It is well settled that a reference stands for all of the specific teachings
thereof as well as the inferences one of ordinary skill in this art would have
reasonably been expected to draw therefrom, see In re Fritch, 972 F.2d
1260, 1264-65, 23 USPQ2d 1780, 1782-83 (Fed. Cir. 1992); In re Preda,
401 F.2d 825, 826, 159 USPQ 342, 344 (CCPA 1968), presuming skill on
the part of this person. In re Sovish, 769 F.2d 738, 743, 226 USPQ 771, 774
(Fed. Cir. 1985).
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