Appeal 2007-0377
Application 10/151,897
BACKGROUND
Appellants’ invention is directed to a process for producing a thermally
stable contact structure between a region of monocrystalline semiconductor and a
region of polycrystalline semiconductor. An understanding of the invention can be
derived from a reading of exemplary independent claims 60 and 78, which are
reproduced as follows:
60. A semiconductor device, comprising:
a region of monocrystalline semiconductor;
a region of non-monocrystalline semiconductor having a plurality of crystals
therein; and
interface layers between at least a portion of the monocrystalline
semiconductior region and a region of the non-monocrystalline semiconductor
region, and between one or more of the plurality of crystals within the region of
non-monocrystalline semiconductor,
said interface layers being adapted and arranged to control a grain growth of
the non-monocrystalline semiconductor region.
78. A semiconductor device, comprising:
a monocrystalline semiconductor region;
a polycrystalline semiconductor region; and
interface means for controlling a tunneling current between the
monocrystalline and polycrystalline semiconductor regions.
The Examiner relies on the following prior art references:
Nicollian US 5,051,786 Sep. 24, 1991
Saito US 5,104,694 Apr. 14, 1992
Hsue US 5,585,656 Dec. 17, 1996
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