Appeal 2007-1097
Application 10/230,593
1 absorbing the radiation, the patterned structure is typically more defined
2 with fewer defects than the methods wherein a BARC layer is not included.
3 Specification 5:9-14.
4 Once the resist has been patterned, the resist layer may be removed to
5 allow the underlying structure to be developed. While it may be desirable to
6 retain the BARC layer, it is typically desirable to remove the BARC layer
7 through an etching process. Specification 5:14-16.
8 To etch the BARC layer, a dry etch plasma including fluorine or
9 nitrogen compounds or O2 is typically implemented. Specification 6:11-12.
10 According to the Appellant, these etchants present certain problems
11 relating to the selectivity of the underlying materials. Specification 6:12-21.
12 2. Appellant’s invention
13 The Appellant’s invention generally relates to a method of
14 manufacturing integrated circuits and, more particularly, to a method of
15 etching anti-reflectant coating layers. Specification 2:7-8.
16 Figure 1 is a cross sectional view of a device 10, such as an integrated
17 circuit, during the fabrication process. Specification 8:6-7.
18 An anti-reflectant (ARC) layer, such as a bottom anti-reflectant
19 coating (BARC) layer 14 and a photoresist 16 are disposed over a substrate
20 12. Specification 8:7-9.
21 The substrate 12 may be a semiconductor wafer, photomask blank,
22 dielectric foundation, etc. Specification 8:9-10.
23 One specific method used to etch the BARC 14 may be a dry etch
24 plasma process. Specification 10:19.
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Last modified: September 9, 2013