Ex parte SATOH et al. - Page 12




          Appeal No. 95-2599                                                          
          Application 07/983,931                                                      


          claims 9 and 10.  Upon a closer review of Sato, we fail to find             
          that Sato teaches or suggests that the lower portion includes a             
          section having tapered side walls.  Sato only teaches that a                
          silicon layer 5 is formed on the side walls of the gate electrode           
          3 shown in Figure 1c.  Therefore, we will not sustain the                   
          rejection of claims 9 and 10 as being anticipated under 35 U.S.C.           
          § 102 or unpatentable under 35 U.S.C. § 103.                                
               Finally, claims 6, 8 through 10, 22, 24 and 25 stand                   
          rejected under the judicially created doctrine of obviousness-              
          type double patenting as being unpatentable over the claims 23,             
          26, 33 and 34 present in U.S. Patent No. 5,543,646.  On page 2 of           
          the supplemental reply brief, Appellants argue that the rejection           
          is improper because the Examiner did not specify which claims of            
          the co-pending application are employed in the rejection.  The              



          Examiner responded to the supplemental reply brief with a letter,           
          mailed July 3, 1995, which clarified that Appellants' claims 6, 8           
          through 10, 22, 24 and 25 stand provisionally rejected under the            
          judicially created doctrine of obviousness-type double patenting            
          as being unpatentable over the claims 23, 26, 33 and 34 present             



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