Appeal No. 95-2599
Application 07/983,931
having a second impurity concentration which is higher
than the first impurity concentration, the first
impurity layer portions defining a first channel region
at the main surface of the substrate and the second
impurity layer portions defining a second channel
region, the first impurity layer portions being
shallower throughout the substrate as compared
with the second impurity layer portions; and
a shaped conductive layer formed by etching on said
first channel region with an insulating film interposed
therebetween at said main surface, said shaped
conductive layer having an upper portion and a lower
portion, the upper portion having a flat upper surface
and being longer than the lower portion, the length of
the lower portion adjacent the insulating film being
substantially equal to or shorter than the length of
said first channel region, the width of the second
channel region being no greater than the length of the
upper portion upper surface, and the upper and lower
portions being formed of the same material, with the
lower portion having a faster etch rate as compared
with an etch rate of the upper portion under the same
etching conditions, and wherein there is only
insulating film between outermost ends of the shaped
conductive layer upper portion and the main surface of
the substrate.
The Examiner relies on the following reference:
Sato et al. (Sato) 63-044770 Feb. 25, 1988
(Japanese Kokai)
Claims 6, 8 through 10, 22, 24 and 25 stand rejected under
35 U.S.C. § 102 as anticipated by Sato or in the alternative
claims 6, 8 through 10, 22, 24 and 25 stand rejected under 35
U.S.C. § 103 as being unpatentable over Sato. In the supple-
mental Examiner's answer, the Examiner sets forth a new ground of
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