Appeal No. 95-1009
Application 07/858,632
2. A method according to claim 1, wherein said
leveling is achieved by an additional deposition of the
filling material.
3. A method according to claim 1, wherein said
leveling is achieved by a full surface etch back process.
4. A method of fabricating an electronic device, of
the type wherein grooves formed in a substrate are filled up
with a filling material deposited by a deposition process in
which etching and deposition are achieved concurrently,
wherein the improvement comprises:
effecting said deposition process under such
conditions that the difference in thickness of the deposited
filling material between a central portion and a peripheral
portion of the substrate is canceled out; and
thereafter, polishing the substrate to smooth
the same.
5. A method of fabricating an electronic device, of
the type wherein grooves formed in a substrate are filled up
with a filling material deposited by a deposition process in
which etching and deposition are achieved concurrently,
wherein the improvement comprises:
after said deposition process, effecting an
additional deposition process under such conditions that the
ratio of deposition rate to etching rate is greater at a
peripheral portion than at a central portion of the substrate,
thereby reshaping the filling material deposited on the
substrate by the first deposition process; and
thereafter, polishing the substrate to smoothen
the same.
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