Appeal No. 96-1549
Application 08/296,988
under 35 U.S.C. § 103 for obviousness over the prior art. We 2
reverse.
The invention is a semiconductor memory device which
includes a continuous buried layer which serves as a barrier
against "-ray induced carriers.
Claim 10, the sole appealed claim, reads as follows:
10. A semiconductor memory device including a memory sell
having a write/read transistor and a charge storage capacitor
comprising:
a semiconductor substrate formed of a material having a
first conductivity type and first impurity concentration, said
substrate having a main surface;
a field oxide isolation film formed on said main surface for
isolating semiconductor elements from each other;
a pair of regions of a second conductivity type of said
write/read transistor formed on said main surface, a first region
of said pair of regions being connected with a bit line and the
second region of said pair of regions being connected with one
electrode of said charge storage capacitor;
a gate formed on said main surface between said pair of
regions of said write/read transistor; and
a continuous buried layer of the first conductivity type
formed to stop " particles having a second impurity concentration
higher than said first impurity concentration of said substrate
and being continuously formed in said substrate beneath said gate
and said pair of regions of said write/read transistor as well as
beneath said field oxide isolation film,
2This is the second § 134 appeal in this application. In
the first appeal (Appeal No. 93-3432), the Board affirmed the
§ 103 rejection of a different claim, i.e., claim 9.
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