Appeal No. 96-1549
Application 08/296,988
wherein said continuous buried layer has a first peak
position of impurity concentration beneath said field oxide
isolation film and a second peak position of impurity
concentration beneath said gate and said first region of said
pair of regions, a first depth from said main surface to said
first peak position being less than a second depth from said main
surface to said second peak position, and
said continuous buried layer has a lower surface arranged so
that the entire lower surface is in contact with said substrate
material.
The only reference relied on by the examiner in the Answer
is:
Wordeman et al. (Wordeman), A Buried N-Grid for Protection
Against Radiation Induced Charge Collection in Electronic
Circuits, IEDM Tech. Dig., pp. 40-43, 1981.
Although the final Office action (at 3) additionally
mentions Bakeman, Jr., et al. U.S. Patent 4,506,436 (Bakeman) in
response to Appellant's arguments, the Answer specifically states
(at 5) that Bakeman is not used in the rejection. Accordingly, 3
Bakeman has not been considered.
Claim 10 stands rejected for obviousness over the DRAM cell
structure shown in Figure 6 of Wordeman, which includes, inter
alia, a buried grid of n-type material (labeled "BURIED n-LAYER")
and a buried continuous layer of p-type material (labeled "BURIED
3Bakeman was relied on in the previous appeal, in which
the Board affirmed a rejection of claim 9 for obviousness over
Wordeman in view of Bakeman.
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