Appeal No. 96-2697
Application 08/215,170
5-7 have been allowed by the examiner. Claims 8-13 have been
cancelled.
The disclosed invention pertains to a semiconductor
device, and particularly, to a layer of spin on glass (SOG)
overlying the substrate and device layers of the semiconductor
device. The invention is specifically directed to the
composition of the SOG.
Representative claim 1 is reproduced as follows:
1. A semiconductor device comprising:
a substrate material;
a plurality of device layers overlying the substrate
material;
a layer of a spin on glass also overlying the substrate
material, the spin on glass comprising:
on the order of 0% to 20% by volume of
tetraethylorthosilicate (TEOS);
on the order of 0.01% to 20% by volume of
tetraethylorthogermanate (TEOG);
on the order of 0% to 1% by volume the equivalent of
nitric acid (HNO );
3
on the order of 70% to 85% by volume of alcohol; and a
remaining balance of water, wherein the ratio of volume of
water to the sum of volume of TEOS and TEOG is less than 0.80.
2
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