Appeal No. 97-4091
Application 08/382,701
around the metal wiring such that a diffusion barrier is formed
to stop the migration of metal atoms from one conductor to
another through the intermediate dielectric material.
It is apparent that the examiner has taken a much too broad
interpretation of the term "covering" in the context of these
claims. It appears that to the examiner, "covering" is met
whenever any silicon carbide is found to be positioned above
a metal electrode. That is too broad an interpretation and
unreasonable in light of the appellants’ specification.
According to the examiner, Yonezawa does not disclose that
any metal wiring is covered by a silicon carbide layer. The
examiner also states (answer at 6, line 2) that the following
argument of the appellants (Br. page 5, line 20 to page 6,
line 3) is substantially correct:
The aluminum mounting electrodes are
contacted by the silicon carbide however,
they are not covered by the silicon carbide.
There is nothing in Yonezawa et al. to
suggest applying another layer of silicon
carbide over the aluminum mounting electrodes
or to cover the aluminum mounting electrodes
with the silicon carbide. (Emphasis in
original.)
However, the examiner takes the position (answer at page 6, lines
3-7) that:
[I]t would have been obvious to duplicate the
layers 14-17, together with the layers 19a"
and 19b", thereby the aluminum electrodes are
6
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